M9X1051

Technical Characteristics

• Overall Width

  0.245 inches minimum all semiconductor device diode and 0.251 inches maximum all semiconductor device diode

• Power Rating Per Characteristic

  50.0 milliwatts small-signal output power, common-base minor all semiconductor device diode

• Inclosure Material

  metal all semiconductor device diode

• Terminal Type And Quantity

  2 pin all semiconductor device diode

• Test Data Document

  30003-704as11964 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Field Force Effect Type

  electrostatic charge

• Semiconductor Material

  silicon all semiconductor device diode

• Overall Height

  0.135 inches nominal all semiconductor device diode

• Function For Which Designed

  tunnel diode

• Overall Length

  0.325 inches minimum all semiconductor device diode and 0.335 inches maximum all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  100.0 deg celsius junction all semiconductor device diode

• Component Name And Quantity

  2 semiconductor device diode