704AS11410-2

Technical Characteristics

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Memory Device Type

  pal

• Input Circuit Pattern

  22 input

• Time Rating Per Chacteristic

  30.00 nanoseconds maximum access

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Features Provided

  programmed and electrostatic sensitive and burn in and bipolar

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Case Outline Source And Designator

  d-9 mil-m-38510

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Maximum Power Dissipation Rating

  1.2 watts