80-00061-002

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  1000.0 maximum reverse voltage, peak 9th semiconductor device diode

• Thread Series Designator

  unc

• Features Provided

  electrostatic sensitive

• Overall Height

  0.300 inches nominal

• Overall Width

  1.250 inches nominal

• Nominal Thread Size

  0.112 inches

• Mounting Facility Quantity

  2

• Voltage Rating In Volts Per Characteristic

  800.0 maximum reverse voltage, peak 1st semiconductor device diode

• Mounting Method

  threaded hole

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction

• Voltage Rating In Volts Per Characteristic

  800.0 maximum reverse voltage, peak 2nd semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  800.0 maximum reverse voltage, peak 3rd semiconductor device diode

• Terminal Type And Quantity

  4 turret

• Voltage Rating In Volts Per Characteristic

  800.0 maximum reverse voltage, peak 4th semiconductor device diode

• Component Name And Quantity

  10 semiconductor device diode

• Overall Length

  1.500 inches nominal

• Voltage Rating In Volts Per Characteristic

  800.0 maximum reverse voltage, peak 5th semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  1000.0 maximum reverse voltage, peak 10th semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  800.0 maximum reverse voltage, peak 6th semiconductor device diode

• Test Data Document

  16340-80-00061 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Voltage Rating In Volts Per Characteristic

  800.0 maximum reverse voltage, peak 7th semiconductor device diode

• Inclosure Material

  metal and plastic

• Voltage Rating In Volts Per Characteristic

  800.0 maximum reverse voltage, peak 8th semiconductor device diode