OM6012SAT
Semiconductor Devices and Associated Hardware
TRANSISTOR
OM6012SAT
5961 - Semiconductor Devices and Associated Hardware
Mallinckrodt Specialty Chemicals Co
TRANSISTOR
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Technical Characteristics
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Mounting Facility Quantity
1
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Terminal Type And Quantity
3 uninsulated wire lead
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Power Rating Per Characteristic
100.0 watts small-signal input power, common-collector absolute
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~1
08748-tr169 drawing (this is the basic governing draw
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Special Test Features
environmental stress screening
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Semiconductor Material
silicon
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Overall Length
0.790 inches minimum and 0.800 inches maximum
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Mounting Method
terminal and unthreaded hole
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Current Rating Per Characteristic
7.00 amperes source cutoff current maximum of standard range and 28.00 amperes forward current, average any acceptable
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Overall Width
0.535 inches minimum and 0.545 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-254
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Overall Height
0.249 inches minimum and 0.260 inches maximum
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Internal Configuration
field effect
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
500.0 minimum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 20.0 maximum gate to source voltage
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Test Data Document
08748-tr162 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing) and