MJD31C
Semiconductor Devices and Associated Hardware
TRANSISTOR
MJD31C
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
junction contact
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
36.0 maximum collector to base voltage/static/emitter open and 16.0 maximum collector-to-emitter, substaining voltage, base open-circuited and 4.0 maximum emitter to base voltage, static, collector open
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Current Rating Per Characteristic
400.00 milliamperes source cutoff current maximum
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Semiconductor Material
silicon
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Power Rating Per Characteristic
3.0 watts small-signal input power, common-collector absolute
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Special Features
junction pattern arrangement: npn
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