NE64535-D
Semiconductor Devices and Associated Hardware
TRANSISTOR
NE64535-D
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Height
1.8 millimeters maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Length
10.15 millimeters nominal
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Terminal Type And Quantity
4 ribbon
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Power Rating Per Characteristic
400.0 milliwatts small-signal input power, common-emitter absolute
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Inclosure Material
plastic
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Semiconductor Material
silicon
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Terminal Length
3.8 millimeters minimum
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact
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Overall Width
10.15 millimeters nominal
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Voltage Rating In Volts Per Characteristic
12.0 maximum breakdown voltage, collector-to-emitter, base open and 25.0 maximum breakdown voltage, collector-to-base, emitter open and 1.5 maximum breakdown voltage, emitter-to-base, collector open
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Current Rating Per Characteristic
0.10 microamperes zero-gate-voltage source current preset and 65.00 milliamperes source cutoff current maximum and 1.00 microamperes zero-gate-voltage source current major
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Mounting Method
terminal
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Electrode Internally-Electrically Connected To Case
collector