JAN2N2369A
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N2369A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.210 inches maximum
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Overall Diameter
0.230 inches maximum
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Internal Configuration
junction contact
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Mounting Method
terminal
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Semiconductor Material
silicon
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~1
short-circuited to emitter
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Power Rating Per Characteristic
1.2 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Test Data Document
81349-mil-prf-19500 specification and 94580-10104624 drawing
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Electrode Internally-Electrically Connected To Case
collector
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Voltage Rating In Volts Per Characteristic
40.0 maximum collector to base voltage/static/emitter open and 4.5 maximum emitter to base voltage, static, collector open and 15.0 maximum collector to emitter voltage/static/base open and 40.0 maximum collector to emitter voltage, dc with base
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Special Features
part shall be selected for a minimum beta of 50 at 25c, ic = 1.0ma.; junction pattern arrangement: npn
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Terminal Type And Quantity
3 uninsulated wire lead