JANTX2N2369A

Semiconductor Devices and Associated Hardware

TRANSISTOR

JANTX2N2369A

5961-01-386-2945

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    0.210 inches maximum

  • Overall Diameter

    0.230 inches maximum

  • Internal Configuration

    junction contact

  • Mounting Method

    terminal

  • Semiconductor Material

    silicon

  • ~1

    short-circuited to emitter

  • Power Rating Per Characteristic

    1.2 watts maximum total power dissipation

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Test Data Document

    81349-mil-prf-19500 specification and 94580-10104624 drawing

  • Electrode Internally-Electrically Connected To Case

    collector

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum collector to base voltage/static/emitter open and 4.5 maximum emitter to base voltage, static, collector open and 15.0 maximum collector to emitter voltage/static/base open and 40.0 maximum collector to emitter voltage, dc with base

  • Special Features

    part shall be selected for a minimum beta of 50 at 25c, ic = 1.0ma.; junction pattern arrangement: npn

  • Terminal Type And Quantity

    3 uninsulated wire lead

Certified to
AS6081 Methods

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