JANTX2N7109
Semiconductor Devices and Associated Hardware
TRANSISTOR
JANTX2N7109
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
field effect
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Field Force Effect Type
electrostatic charge
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~1
dc and 20.0 maximum gate to source voltage
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Voltage Rating In Volts Per Characteristic
20.0 maximum drain to source voltage and 30.0 maximum gate non-trigger voltage,
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Terminal Type And Quantity
4 uninsulated wire lead
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Inclosure Material
metal
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Overall Length
0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.230 inches maximum
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Channel Polarity And Control Type
n-channel insulated gate type
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Mounting Method
terminal
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Semiconductor Material
silicon
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Current Rating Per Characteristic
50.00 milliamperes maximum drain current
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Power Rating Per Characteristic
0.3 watts maximum total device dissipation
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Precious Material And Location
terminal surface option gold
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Precious Material
gold
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Test Data Document
81349-mil-s-19500/571 specification