JANTX2N7109

Semiconductor Devices and Associated Hardware

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JANTX2N7109

5961-01-388-6504

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Internal Configuration

    field effect

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-72

  • Field Force Effect Type

    electrostatic charge

  • ~1

    dc and 20.0 maximum gate to source voltage

  • Voltage Rating In Volts Per Characteristic

    20.0 maximum drain to source voltage and 30.0 maximum gate non-trigger voltage,

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Inclosure Material

    metal

  • Overall Length

    0.210 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Diameter

    0.230 inches maximum

  • Channel Polarity And Control Type

    n-channel insulated gate type

  • Mounting Method

    terminal

  • Semiconductor Material

    silicon

  • Current Rating Per Characteristic

    50.00 milliamperes maximum drain current

  • Power Rating Per Characteristic

    0.3 watts maximum total device dissipation

  • Precious Material And Location

    terminal surface option gold

  • Precious Material

    gold

  • Test Data Document

    81349-mil-s-19500/571 specification

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AS6081 Methods

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