ROM/PROM
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
ROM/PROM
5962 - Microcircuits, Electronic
Defense Electronics Supply Center
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Maximum Power Dissipation Rating
1.04 watts
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Operating Temp Range
-55.0/+125.0 deg celsius
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Nuclear Hardness Critical Feature
hardened
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Terminal Type And Quantity
24 flat leads
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Time Rating Per Chacteristic
40.00 nanoseconds maximum delay
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Case Outline Source And Designator
f-9 mil-m-38510
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Device Type
rom
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Voltage Rating And Type Per Characteristic
7.0 volts maximum power source
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Bit Quantity (Non-Core)
32768
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Word Quantity (Non-Core)
4096
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Inclosure Configuration
dual-in-line
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Features Provided
hermetically sealed and burn in and electrostatic sensitive and programmed
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Output Logic Form
transistor-transistor logic