ROM/PROM

Microcircuits, Electronic

MICROCIRCUIT,MEMORY

ROM/PROM

5962-01-388-7860

5962 - Microcircuits, Electronic

Defense Electronics Supply Center

MICROCIRCUIT,MEMORY

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Technical Characteristics

  • Case Outline Source And Designator

    f-6 mil-m-38510

  • Maximum Power Dissipation Rating

    1.04 watts

  • Operating Temp Range

    -55.0/+125.0 deg celsius

  • Inclosure Configuration

    flat pack

  • Nuclear Hardness Critical Feature

    hardened

  • Terminal Type And Quantity

    24 flat leads

  • Time Rating Per Chacteristic

    40.00 nanoseconds maximum delay

  • Test Data Document

    96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

  • Storage Temp Range

    -65.0/+150.0 deg celsius

  • Memory Device Type

    rom

  • Inclosure Material

    ceramic

  • Terminal Surface Treatment

    solder

  • Voltage Rating And Type Per Characteristic

    7.0 volts maximum power source

  • Bit Quantity (Non-Core)

    32768

  • Word Quantity (Non-Core)

    4096

  • Features Provided

    hermetically sealed and burn in and programmed and electrostatic sensitive

  • Output Logic Form

    transistor-transistor logic

Certified to
AS6081 Methods

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