588R557H01

Semiconductor Devices and Associated Hardware

TRANSISTOR

588R557H01

5961-01-392-4824

5961 - Semiconductor Devices and Associated Hardware

Ixys Corporation

TRANSISTOR

ACT NOW! SUBMIT A QUICK QUOTE.

Technical Characteristics

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Electrode Internally-Electrically Connected To Case

    drain

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-204ae

  • Voltage Rating In Volts Per Characteristic

    500.0 nominal drain to source voltage

  • Overall Height

    8.38 millimeters maximum

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

  • Power Rating Per Characteristic

    300.0 watts small-signal input power, common-collector absolute

  • Mounting Method

    unthreaded hole

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Overall Length

    39.22 millimeters maximum

  • Overall Width

    25.80 millimeters maximum

  • Current Rating Per Characteristic

    21.00 amperes all primaries maximum of standard range

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
Read more...

Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
Read more...

Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
Read more...