588R557H01

Semiconductor Devices and Associated Hardware

TRANSISTOR

588R557H01

5961-01-392-4824

5961 - Semiconductor Devices and Associated Hardware

Northrop Grumman Systems Corporation

TRANSISTOR

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Technical Characteristics

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Electrode Internally-Electrically Connected To Case

    drain

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-204ae

  • Voltage Rating In Volts Per Characteristic

    500.0 nominal drain to source voltage

  • Overall Height

    8.38 millimeters maximum

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

  • Power Rating Per Characteristic

    300.0 watts small-signal input power, common-collector absolute

  • Mounting Method

    unthreaded hole

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Overall Length

    39.22 millimeters maximum

  • Overall Width

    25.80 millimeters maximum

  • Current Rating Per Characteristic

    21.00 amperes all primaries maximum of standard range

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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