588R557H01
Semiconductor Devices and Associated Hardware
TRANSISTOR
588R557H01
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
-
Electrode Internally-Electrically Connected To Case
drain
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-204ae
-
Voltage Rating In Volts Per Characteristic
500.0 nominal drain to source voltage
-
Overall Height
8.38 millimeters maximum
-
Semiconductor Material
silicon
-
Terminal Type And Quantity
2 pin and 1 case
-
Mounting Facility Quantity
2
-
Power Rating Per Characteristic
300.0 watts small-signal input power, common-collector absolute
-
Mounting Method
unthreaded hole
-
Internal Configuration
field effect
-
Inclosure Material
metal
-
Overall Length
39.22 millimeters maximum
-
Overall Width
25.80 millimeters maximum
-
Current Rating Per Characteristic
21.00 amperes all primaries maximum of standard range