352-1550-042
Semiconductor Devices and Associated Hardware
TRANSISTOR
352-1550-042
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Precious Material And Location
internal wire and metalized die and wire bond gold
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Precious Material
gold
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Special Features
case contains beryllium oxide - handle and dispose iaw hazmat procedures; junction pattern arrangement: npn
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Test Data Document
13499-352-1550 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Internal Configuration
junction contact
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Overall Width
0.800 inches nominal
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum
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Semiconductor Material
silicon
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Overall Height
0.160 inches maximum
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Inclosure Material
ceramic and metal
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Electrode Internally-Electrically Connected To Case
base
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
109.0 watts any acceptable absolute
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Overall Length
1.340 inches nominal
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Mounting Method
slot
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Terminal Type And Quantity
1 case and 4 ribbon
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~1
static, collector open
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Voltage Rating In Volts Per Characteristic
65.0 maximum collector to base voltage/static/emitter open and 35.0 maximum collector to emitter voltage/static/base open and 65.0 maximum collector to emitter voltage, dc with base short-circuited to emitter and 4.0 maximum emitter to base voltage,