IXSM1397
Semiconductor Devices and Associated Hardware
TRANSISTOR
IXSM1397
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
39.37 millimeters maximum
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Power Rating Per Characteristic
200.0 watts small-signal input power, common-collector preset
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Electrode Internally-Electrically Connected To Case
collector
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Overall Height
11.05 millimeters maximum
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Voltage Rating In Volts Per Characteristic
1000.0 maximum collector to emitter voltage, dc with base short-circuited to emitter
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-204ae
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Semiconductor Material
silicon
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Overall Width
25.27 millimeters maximum
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Mounting Method
unthreaded hole
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Internal Configuration
field effect
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Inclosure Material
metal
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Current Rating Per Characteristic
50.00 amperes source cutoff current maximum