7555124P0001

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Maximum Power Dissipation Rating

  450.0 milliwatts

• Storage Temp Range

  -55.0/+160.0 deg celsius

• Output Logic Form

  transistor-transistor logic

• Input Circuit Pattern

  dual 1 input

• Terminal Type And Quantity

  8 printed circuit

• Body Width

  0.291 inches maximum

• Voltage Rating And Type Per Characteristic

  20.00 volts maximum power source

• Body Height

  0.130 inches maximum

• Body Length

  0.400 inches maximum

• Current Rating Per Characteristic

  12.00 milliamperes reverse current, dc absolute

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Features Provided

  monolithic and high speed and electrostatic sensitive

• Time Rating Per Chacteristic

  40.00 nanoseconds maximum fall

• Design Function And Quantity

  2 driver

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Part Name Assigned By Controlling Agency

  dual inverting power mosfet driver