H8000218-001T

Technical Characteristics

• Channel Polarity And Control Type (Non-Core)

  n-channel insulated gate type

• Mounting Facility Quantity

  1

• Overall Length

  16.89 millimeters maximum

• Power Rating Per Characteristic

  45.0 watts small-signal input power, common-collector absolute

• Overall Height

  5.08 millimeters maximum

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  10.80 amperes source cutoff current maximum of standard range and 43.20 amperes source cutoff current universal and 10.80 amperes zero-gate-voltage source current any acceptable

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Mounting Method

  unthreaded hole

• Internal Configuration

  field effect

• Overall Width

  16.38 millimeters maximum

• Terminal Type And Quantity

  3 pin

• Inclosure Material

  metal

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-257ab

• Test Data Document

  82577-h8000218 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Voltage Rating In Volts Per Characteristic

  100.0 minimum breakdown voltage, drain-to-source, with all other terminals short-circuited to source