X2N6396X
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
X2N6396X
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Power Rating Per Characteristic
20.0 watts small-signal input power, common-collector blank and 0.5 watts small-signal input power, common-collector universal
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Test Data Document
82577-h8000313 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Current Rating Per Characteristic
12.00 amperes forward current, total rms horsepower metric and 100.00 amperes peak forward surge current nanoamperes
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-257aa
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Inclosure Material
metal
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Terminal Type And Quantity
3 pin
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Overall Width
16.38 millimeters maximum
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Mounting Method
unthreaded hole
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
200.0 maximum repetitive peak reverse voltage and 200.0 maximum repetitive peak off-state voltage
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Overall Height
5.08 millimeters maximum
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Overall Length
16.89 millimeters maximum
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Mounting Facility Quantity
1