8200802JX

Technical Characteristics

• Features Provided

  hermetically sealed and burn in and schottky and programmable and bipolar and 3-state output

• Maximum Power Dissipation Rating

  1.04 watts

• Output Logic Form

  bipolar metal-oxide semiconductor

• Time Rating Per Chacteristic

  55.00 nanoseconds maximum access

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Current Rating Per Characteristic

  100.00 milliamperes forward current, maximum peak total value not applicable

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic

• Body Width

  0.610 inches maximum

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Bit Quantity (Non-Core)

  32768

• Word Quantity (Non-Core)

  4096

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Body Length

  1.290 inches maximum

• Body Height

  0.210 inches maximum