239115-1
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE SET
239115-1
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE SET
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Technical Characteristics
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Internal Configuration
field effect all transistor
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Component Function Relationship
matched
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Terminal Type And Quantity
3 uninsulated wire lead all transistor
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Semiconductor Material
silicon all transistor
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Current Rating Per Characteristic
10.00 milliamperes source cutoff current minor all transistor
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Maximum Operating Temp Per Measurement Point
135.0 deg celsius ambient air all transistor
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Voltage Rating In Volts Per Characteristic
-25.0 maximum drain to gate voltage all transistor and -25.0 maximum gate to source voltage all transistor
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Channel Polarity And Control Type (Non-Core)
n-channel junction type all transistor
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Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector absolute all transistor
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Overall Length
0.210 inches maximum all transistor
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-92 all transistor
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Overall Width
0.205 inches maximum all transistor
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Overall Height
0.165 inches maximum all transistor
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Component Name And Quantity
2 transistor
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Inclosure Material
plastic all transistor
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End Item Identification
6625-01-363-6212
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Field Force Effect Type
electrostatic charge
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Mounting Method
terminal all transistor
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Test Data Document
34280-ps239115 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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data on certain environmental and performance r