J212

Technical Characteristics

• Internal Configuration

  field effect all transistor

• Component Function Relationship

  matched

• Terminal Type And Quantity

  3 uninsulated wire lead all transistor

• Semiconductor Material

  silicon all transistor

• Current Rating Per Characteristic

  10.00 milliamperes source cutoff current minor all transistor

• Maximum Operating Temp Per Measurement Point

  135.0 deg celsius ambient air all transistor

• Voltage Rating In Volts Per Characteristic

  -25.0 maximum drain to gate voltage all transistor and -25.0 maximum gate to source voltage all transistor

• Channel Polarity And Control Type (Non-Core)

  n-channel junction type all transistor

• Power Rating Per Characteristic

  360.0 milliwatts small-signal input power, common-collector absolute all transistor

• Overall Length

  0.210 inches maximum all transistor

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-92 all transistor

• Overall Width

  0.205 inches maximum all transistor

• Overall Height

  0.165 inches maximum all transistor

• Component Name And Quantity

  2 transistor

• Inclosure Material

  plastic all transistor

• End Item Identification

  6625-01-363-6212

• Field Force Effect Type

  electrostatic charge

• Mounting Method

  terminal all transistor

• Test Data Document

  34280-ps239115 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performance r