2N3960
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3960
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Length
0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.230 inches maximum
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Function For Which Designed
switching
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Internal Configuration
junction contact
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Mounting Method
terminal
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Terminal Circle Diameter
0.100 inches nominal
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Semiconductor Material
silicon
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Inclosure Material
metal
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Internal Junction Configuration
npn
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Field Force Effect Type
electrostatic charge
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Power Rating Per Characteristic
750.0 milliwatts maximum total device dissipation
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Terminal Type And Quantity
3 uninsulated wire lead
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Voltage Rating In Volts Per Characteristic
20.0 maximum collector to base voltage/static/emitter open and 12.0 maximum collector to emitter voltage/static/base open and 4.5 maximum emitter to base voltage, static, collector open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Test Data Document
01365-87001f1273 drawing
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-206aa
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Electrode Internally-Electrically Connected To Case
collector