NH2808885-6/1S

Technical Characteristics

• Memory Device Type

  first-in first-out

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Nuclear Hardness Critical Feature

  hardened

• Bit Quantity (Non-Core)

  4608

• Storage Temp Range

  -65.0/+135.0 deg celsius

• Features Provided

  electrostatic sensitive and radiation hardened

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Terminal Type And Quantity

  28 printed circuit

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum input and 7.0 volts maximum input

• Inclosure Configuration

  dual-in-line