VG021085-013

Technical Characteristics

• Time Rating Per Chacteristic

  55.00 nanoseconds af output megawatts

• Inclosure Configuration

  dual-in-line

• Memory Device Type

  eprom

• Terminal Type And Quantity

  28 printed circuit

• Features Provided

  monolithic and electrostatic sensitive and ultraviolet erasable and programmable

• Inclosure Material

  silicon

• Word Quantity (Non-Core)

  16384

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Terminal Surface Treatment

  solder

• Maximum Power Dissipation Rating

  1.0 watts

• Bit Quantity (Non-Core)

  131072

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Special Features

  altered item, make from p/n 5962-8953702yx, dwg name microcircuits, memory, digital, cmos, 16k x 8 uv eprom, monolithic silicon; endurance 25 cycles/byte, minimum

• Part Name Assigned By Controlling Agency

  microcircuit-eraseable programmable read only memory

• End Item Identification

  agm-130/tvgs

• Test Data Document

  96906-mil-std883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Criticality Code Justification

  cbbl