1N6659LTXV

Technical Characteristics

• Inclosure Material

  ceramic

• Mounting Facility Quantity

  1

• Overall Width

  0.545 inches maximum

• Overall Height

  0.560 inches maximum

• Overall Length

  0.890 inches maximum

• Component Name And Quantity

  2 semiconductor device diode

• Current Rating Per Characteristic

  40.00 amperes forward current, average absolute all light emitting diode and 400.00 amperes forward current, average preset all light emitting diode

• Voltage Rating In Volts Per Characteristic

  200.0 maximum working peak reverse voltage all light emitting diode

• Precious Material

  gold

• Test Data Document

  35351-171280 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Precious Material And Location

  plated leads gold

• Response Time

  35.0 nanoseconds maximum all light emitting diode

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-254aa

• Mounting Method

  unthreaded hole

• Terminal Type And Quantity

  3 pin

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction

• Semiconductor Material

  silicon all light emitting diode