7503597G13

Technical Characteristics

• Memory Device Type

  eeprom

• Capitance Rating Per Characteristic

  10.00 input picofarads maximum and 10.00 output picofarads maximum

• Voltage Rating And Type Per Characteristic

  6.2 volts maximum power source and -0.3 volts minimum power source and -0.3 volts minimum input and 6.2 volts maximum input

• Current Rating Per Characteristic

  80.00 milliamperes reverse current, dc absolute

• Special Features

  altered item programmed using 67268 5962-8852506ya (which is 81349 m38510/26105bya) using programming instruction 7554018p7

• Time Rating Per Chacteristic

  150.00 nanoseconds nominal access and 10.00 milliseconds nominal write-cycle width

• Criticality Code Justification

  cbbl

• Body Height

  0.060 inches minimum and 0.120 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Bit Quantity (Non-Core)

  262144

• Features Provided

  electrically alterable and burn in, mil-std-883, class b and monolithic and erasable and electrostatic sensitive and programmed and tested to mil-std-883

• End Item Identification

  pacer dawn

• Terminal Type And Quantity

  32 leadless

• Input Circuit Pattern

  8 input

• Word Quantity (Non-Core)

  32768

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Body Length

  0.540 inches minimum and 0.560 inches maximum

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Body Width

  0.442 inches minimum and 0.458 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Configuration

  leadless flat pack

• Inclosure Material

  ceramic

• Part Name Assigned By Controlling Agency

  microcircuit, programmed (eeprom x28c256emb-25

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Case Outline Source And Designator

  c-12 mil-m-38510