ROM/PROM
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
ROM/PROM
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Output Logic Form
transistor-transistor logic
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Maximum Power Dissipation Rating
1.02 watts
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Time Rating Per Chacteristic
80.00 nanoseconds maximum access and 40.00 nanoseconds maximum propagation delay time, low to high level output
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Voltage Rating And Type Per Characteristic
-1.5 volts minimum input and 7.0 volts maximum power source and -0.5 volts minimum power source and 5.5 volts maximum input
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Word Quantity (Non-Core)
512
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Inclosure Configuration
dual-in-line
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Body Width
0.280 inches minimum and 0.300 inches maximum
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Terminal Type And Quantity
20 printed circuit
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Special Features
altered item made from 81349 m38510/20805byx programmed using rom response pattern p2stod.u65
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Features Provided
w/active pull-up and tested to mil-std-883 and schottky and monolithic and high impedance and hermetically sealed and bipolar and burn in, mil-std-883, class b and programmed and electrostatic sensitive and 3-state output
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Terminal Surface Treatment
solder
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Inclosure Material
ceramic
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End Item Identification
f-16 c/d
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Storage Temp Range
-65.0/+150.0 deg celsius
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Input Circuit Pattern
10 input
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Memory Device Type
prom
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Part Name Assigned By Controlling Agency
med read only memory 1742 s/d
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Body Height
0.175 inches maximum
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Current Rating Per Characteristic
185.00 milliamperes reverse current, dc absolute
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Operating Temp Range
-55.0/+125.0 deg celsius
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Body Length
0.970 inches minimum and 1.010 inches maximum
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Criticality Code Justification
cbbl
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Bit Quantity (Non-Core)
4096