313R834H01
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
313R834H01
5962 - Microcircuits, Electronic
Northrop Grumman Systems Corporation
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Case Outline Source And Designator
f-6 mil-m-38510
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Word Quantity (Non-Core)
1024
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Body Width
0.300 inches minimum and 0.420 inches maximum
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Operating Temp Range
-55.0/+125.0 deg celsius
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Special Features
altered item programmed using device 81349 m38510/20904bkx
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Inclosure Configuration
flat pack
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Current Rating Per Characteristic
185.00 milliamperes reverse current, dc absolute
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Voltage Rating And Type Per Characteristic
7.0 volts maximum power source and -0.5 volts minimum power source and -1.5 volts minimum input and 5.5 volts maximum input
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Features Provided
high impedance and electrostatic sensitive and burn in, mil-std-883, class b and monolithic and bipolar and programmed
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Memory Device Type
prom
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Body Length
0.640 inches maximum
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Bit Quantity (Non-Core)
8192
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Storage Temp Range
-65.0/+150.0 deg celsius
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Time Rating Per Chacteristic
90.00 nanoseconds maximum input to output access
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Part Name Assigned By Controlling Agency
med read only memory boram
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End Item Identification
f016 c/d psp
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Body Height
0.045 inches minimum and 0.090 inches maximum
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Terminal Type And Quantity
24 beam lead
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Input Circuit Pattern
14 input
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Output Logic Form
transistor-transistor logic
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Maximum Power Dissipation Rating
950.0 milliwatts