IRFAG50

Technical Characteristics

• Semiconductor Material

  silicon

• Overall Width

  1.050 inches maximum

• Voltage Rating In Volts Per Characteristic

  1000.0 minimum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 20.0 maximum gate to source voltage

• Electrode Internally-Electrically Connected To Case

  drain

• Power Rating Per Characteristic

  150.0 watts small-signal input power, common-collector absolute

• Overall Height

  0.495 inches maximum

• Channel Polarity And Control Type (Non-Core)

  n-channel insulated gate type

• Overall Length

  1.540 inches maximum

• Test Data Document

  90536-7920719 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Inclosure Material

  metal

• Internal Configuration

  field effect

• Mounting Method

  unthreaded hole

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Mounting Facility Quantity

  2

• Terminal Type And Quantity

  2 pin and 1 case

• Current Rating Per Characteristic

  6.00 amperes source cutoff current maximum of standard range and 22.00 amperes forward current, average any acceptable