DVT03E101
Semiconductor Devices and Associated Hardware
TRANSISTOR
DVT03E101
5961 - Semiconductor Devices and Associated Hardware
Microsemi Corp. - Massachusetts
TRANSISTOR
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Technical Characteristics
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Mounting Facility Quantity
1
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End Item Identification
an/bqn-17 ec- e/i fscm 53711
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Voltage Rating In Volts Per Characteristic
400.0 maximum collector to emitter voltage, dc and 400.0 maximum collector to base voltage, dc and 6.0 maximum emitter to base voltage, dc
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Special Features
npn, silicon, high-power for sonar sounding set, an/bqn-17
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Terminal Type And Quantity
1 case and 2 pin
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Overall Height
0.300 inches maximum
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Overall Length
1.550 inches maximum
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Current Rating Per Characteristic
15.00 amperes source cutoff current minimum and 30.00 amperes source cutoff current maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
250.0 watts small-signal input power, common-collector absolute
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Test Data Document
53711-6871268 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)