473025D71-01

Technical Characteristics

• Time Rating Per Chacteristic

  90.00 nanoseconds maximum access and 50.00 nanoseconds maximum propagation delay time, low to high level output

• Current Rating Per Characteristic

  185.00 milliamperes reverse current, dc absolute

• Body Height

  0.225 inches maximum

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 5.5 volts maximum input and -1.5 volts minimum input and 7.0 volts maximum power source

• Memory Device Type

  prom

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Special Features

  altered item made from 81349 m38510/20802bjx programmed using software 048984-5xc

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic

• End Item Identification

  b-1b

• Terminal Surface Treatment

  solder

• Inclosure Configuration

  dual-in-line

• Input Circuit Pattern

  13 input

• Terminal Type And Quantity

  24 printed circuit

• Word Quantity (Non-Core)

  512

• Body Length

  1.290 inches maximum

• Maximum Power Dissipation Rating

  1.02 watts

• Output Logic Form

  transistor-transistor logic

• Part Name Assigned By Controlling Agency

  microcircuit, digital (programmed 512x8)

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Criticality Code Justification

  cbbl

• Bit Quantity (Non-Core)

  4096

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Features Provided

  high impedance and monolithic and programmed and hermetically sealed and bipolar and burn in, mil-std-883, class b and schottky and tested to mil-std-883 and w/active pull-up and electrostatic sensitive and 3-state output