CY7C1009L-85DMB

Technical Characteristics

• Criticality Code Justification

  cbbl

• Part Name Assigned By Controlling Agency

  microcircuit,memory,digital,cmos,128k x 8 static random access memory (sram) low power,monolithic silicon

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Bit Quantity (Non-Core)

  1048576

• Special Features

  circuit function-dual ce

• Time Rating Per Chacteristic

  85.00 nanoseconds af output megawatts

• Body Length

  1.700 inches maximum

• Word Quantity (Non-Core)

  131072

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Memory Device Type

  ram

• Terminal Type And Quantity

  32 printed circuit

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Body Width

  0.390 inches minimum and 0.420 inches maximum

• Inclosure Material

  ceramic and glass

• Inclosure Configuration

  dual-in-line

• Body Height

  0.232 inches maximum

• Features Provided

  electrostatic sensitive and monolithic and low power and static operation

• End Item Identification

  f-15i