ROM/PROM

Technical Characteristics

• Word Quantity (Non-Core)

  128

• End Item Identification

  an/asq-t27(v)1

• Memory Device Type

  programmed

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay

• Inclosure Material

  ceramic

• Inclosure Configuration

  pin grid array

• Features Provided

  tested to mil-std-883 and programmed

• Voltage Rating And Type Per Characteristic

  5.0 volts nominal input

• Terminal Surface Treatment

  gold

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Terminal Type And Quantity

  68 pin

• Part Name Assigned By Controlling Agency

  microcircuit, 128 macrocell epld,dig isa