4201055-1011

Technical Characteristics

• Voltage Rating And Type Per Characteristic

  5.0 volts nominal input

• Inclosure Configuration

  dual-in-line

• Memory Device Type

  eprom

• Terminal Type And Quantity

  28 printed circuit

• Maximum Power Dissipation Rating

  500.0 milliwatts

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Features Provided

  ultraviolet erasable and monolithic

• Time Rating Per Chacteristic

  200.00 nanoseconds af output megawatts

• Word Quantity (Non-Core)

  32768

• Bit Quantity (Non-Core)

  262144

• Operating Temp Range

  -55.0/+125.0 deg celsius