446/4/80213/003

Technical Characteristics

• Memory Device Type

  eeprom

• Inclosure Configuration

  dual-in-line

• Special Features

  access speed 120.0 nanoseconds

• Inclosure Material

  ceramic

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Terminal Type And Quantity

  32 pin

• Features Provided

  high performance and burn in, mil-std-883, class b and low power and 3-state output

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  5.0 volts nominal power source