A2N20445467
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
A2N20445467
5962 - Microcircuits, Electronic
Bae Systems Defence Systems Ltd
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Memory Device Type
eeprom
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Inclosure Configuration
dual-in-line
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Special Features
access speed 120.0 nanoseconds
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Inclosure Material
ceramic
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Output Logic Form
complementary-metal oxide-semiconductor logic
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Terminal Type And Quantity
32 pin
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Features Provided
high performance and burn in, mil-std-883, class b and low power and 3-state output
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Operating Temp Range
-55.0/+125.0 deg celsius
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Voltage Rating And Type Per Characteristic
5.0 volts nominal power source