5962-8959838MTX

Technical Characteristics

• Part Name Assigned By Controlling Agency

  microcircuit, memory, digital, cmos, 128k x8 stactic random access memory (sram) low power, monolithic silicon

• Word Quantity (Non-Core)

  131072

• Memory Device Type

  ram

• Test Data Document

  96906-mil-std-833 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Configuration

  leadless flat pack

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Special Features

  circuit function 128k x 8 standard power cmos sram dual ce / access time 20 ns

• Features Provided

  low power and monolithic

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum input and 7.0 volts maximum input

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Bit Quantity (Non-Core)

  1048576

• Terminal Type And Quantity

  32 leadless

• End Item Identification

  1055-01-251-9756 e/i fscm 67268