JAN1N4150UR-1
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
JAN1N4150UR-1
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Overall Diameter
0.063 inches minimum and 0.067 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
do-213aa
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Semiconductor Material
silicon
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Mounting Method
compression
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Overall Length
0.130 inches minimum and 0.146 inches maximum
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Terminal Type And Quantity
2 case
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Test Data Document
81349-mil-prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general
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Overall Width
0.103 inches nominal
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Inclosure Material
glass and metal
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Voltage Rating In Volts Per Characteristic
75.0 minimum breakdown voltage, dc and 50.0 maximum working peak reverse voltage
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Specification/Standard Data
81349-mil-prf-19500/231 government specification
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Current Rating Per Characteristic
4.00 amperes forward current, average preset and 200.00 milliamperes forward current, average absolute
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~1
type data on certain environmental and performa