FA1L3Z
Semiconductor Devices and Associated Hardware
TRANSISTOR
FA1L3Z
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
terminal
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Current Rating Per Characteristic
100.00 milliamperes source cutoff current maximum
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Overall Height
1.1 millimeters nominal
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End Item Identification
6625014252551e/ifscm33297
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Semiconductor Material
silicon
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Overall Length
2.9 millimeters nominal
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Inclosure Material
plastic
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Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector absolute
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Terminal Type And Quantity
3 printed circuit
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Overall Width
2.8 millimeters nominal
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
50.0 maximum collector to emitter voltage/static/base open and 60.0 maximum collector to base voltage/static/emitter open and 5.0 maximum emitter to base voltage, static, collector open