ND411G-2

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Mounting Method

  terminal

• Voltage Rating In Volts Per Characteristic

  6.0 maximum reverse voltage, instantaneous all semiconductor device diode

• Component Name And Quantity

  2 semiconductor device diode

• Terminal Type And Quantity

  4 printed circuit

• Power Rating Per Characteristic

  150.0 milliwatts small-signal input power, common-collector absolute all semiconductor device diode

• Current Rating Per Characteristic

  30.00 milliamperes source cutoff current preset all semiconductor device diode

• Overall Height

  1.1 millimeters nominal

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius junction

• Overall Length

  2.9 millimeters nominal

• Inclosure Material

  plastic

• Overall Width

  2.8 millimeters nominal