2SA812
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
2SA812
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Special Features
low frequency low power silicon pnp bjt
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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End Item Identification
general purpose electronic test equipment
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, collector to emitter, sustained and 60.0 maximum breakdown voltage, collector-to-base, emitter open
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Overall Length
2.500 millimeters maximum
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Inclosure Material
glass
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Current Rating Per Characteristic
100.00 milliamperes source cutoff current maximum
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Terminal Length
1.400 millimeters maximum
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Mounting Facility Quantity
3
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Semiconductor Material
silicon
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Overall Width
1.100 millimeters maximum
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Maximum Operating Temp Per Measurement Point
-55.0 deg celsius case and 150.0 deg celsius case
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Power Rating Per Characteristic
200.0 milliwatts small-signal output power, common-base preset