MT4C4256C-10883C

Technical Characteristics

• Part Name Assigned By Controlling Agency

  microcircuit, memory, digital, cmos 256k x 4 dynamic random access memory (dram), monolithic silicon

• Terminal Type And Quantity

  20 printed circuit

• Inclosure Configuration

  dual-in-line

• Bit Quantity (Non-Core)

  1024

• Word Quantity (Non-Core)

  262144

• End Item Identification

  e-3a awacs, rsip ppl

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  dynamic and monolithic

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Memory Device Type

  ram

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Maximum Power Dissipation Rating

  1.0 watts

• Voltage Rating And Type Per Characteristic

  0.0 volts minimum input and 7.0 volts maximum input