MA4GP508-3
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
MA4GP508-3
5961 - Semiconductor Devices and Associated Hardware
Cobham Electronic Systems Inc.
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Inclosure Material
metal
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Overall Length
0.310 millimeters maximum
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Voltage Rating In Volts Per Characteristic
75.0 minimum breakdown voltage, collector to emitter, sustained and 75.0 minimum breakdown voltage, collector-to-base, emitter open
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Current Rating Per Characteristic
10.00 nanoamperes forward current, average peak
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Semiconductor Material
silicon
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Special Features
hardness critical item
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Overall Width
0.310 millimeters maximum
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Maximum Operating Temp Per Measurement Point
-65.0 deg celsius case and 175.0 deg celsius case
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Power Rating Per Characteristic
200.0 watts small-signal input power, common-emitter absolute
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Terminal Type And Quantity
1 uninsulated wire lead
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Mounting Method
terminal
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Mounting Facility Quantity
1
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Overall Height
0.130 millimeters maximum
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