IRFG110

Technical Characteristics

• Inclosure Material

  ceramic

• Mounting Method

  terminal

• Power Rating Per Characteristic

  1.4 watts small-signal input power, common-collector absolute all transistor

• End Item Identification

  e/i fscm aircraft,b-2 bomber (atb)

• Nuclear Hardness Critical Feature

  hardened

• Voltage Rating In Volts Per Characteristic

  100.0 maximum drain to gate voltage all transistor and 100.0 maximum drain to source voltage all transistor and 20.0 maximum gate to source voltage all transistor

• Semiconductor Material

  silicon all transistor

• Current Rating Per Characteristic

  0.95 amperes source cutoff current maximum of standard range all transistor

• Overall Length

  0.770 inches maximum

• Overall Height

  0.175 inches maximum

• Terminal Type And Quantity

  14 pin

• Special Features

  hardness critical process

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Component Name And Quantity

  4 transistor

• Overall Width

  0.310 inches maximum

• Test Data Document

  07690-632049 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)