2N6080
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N6080
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Special Features
minimum derate j to c 68.0 milliwatts; on-state current 50 megahertz; part name assigned by controlling agency - silicon npn power transistor
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Semiconductor Material
silicon alloy
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Voltage Rating In Volts Per Characteristic
18.0 maximum breakdown voltage, collector-to-emitter, base open and 38.0 maximum breakdown voltage, collector-to-base, emitter open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
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Power Rating Per Characteristic
12.0 watts small-signal input power, common-emitter peak
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Transfer Ratio
5.0 minimum static forward current transfer ratio, common-emitter
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Current Rating Per Characteristic
1000.00 milliamperes source cutoff current maximum and 500.00 milliamperes source cutoff current minimum and 0.25 milliamperes zero-gate-voltage source current preset
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