SI9953DY
Semiconductor Devices and Associated Hardware
TRANSISTOR
SI9953DY
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Height
0.053 inches minimum and 0.069 inches maximum
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Inclosure Material
ceramic
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Mounting Method
terminal
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Overall Width Across Flats
0.149 inches minimum and 0.157 inches maximum
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Internal Configuration
field effect-dual gate
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Overall Length
0.189 inches minimum and 0.197 inches maximum
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Power Rating Per Characteristic
2.0 watts small-signal input power, common-collector absolute
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Semiconductor Material
silicon
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Channel Polarity And Control Type (Non-Core)
p-channel insulated gate type
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Current Rating Per Characteristic
-2.30 amperes service voltage maximum of standard range and 2.30 amperes source cutoff current maximum of standard range
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Terminal Type And Quantity
8 beam lead
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Voltage Rating In Volts Per Characteristic
20.0 maximum gate to source cutoff voltage
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End Item Identification
encryption-decryption equipment
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Maximum Operating Temp Per Measurement Point
-55.0 deg celsius junction and 150.0 deg celsius junction
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Overall Width
0.228 inches minimum and 0.244 inches maximum