IDT6116LA150DB
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
IDT6116LA150DB
5962 - Microcircuits, Electronic
Integrated Device Technology Inc
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Terminal Type And Quantity
24 printed circuit
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Time Rating Per Chacteristic
150.00 nanoseconds maximum access
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Features Provided
static operation and low power and asynchronous and high speed and tested to mil-std-883
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Inclosure Material
ceramic
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Storage Temp Range
-65.0/+150.0 deg celsius
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Output Logic Form
complementary-metal oxide-semiconductor logic
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Memory Device Type
ram
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Part Name Assigned By Controlling Agency
cmos static ram, 16k (2k by 8-bit)
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Current Rating Per Characteristic
85.00 milliamperes forward current, nonrepetitive, maximum peak total value minor
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Voltage Rating And Type Per Characteristic
4.5 volts minimum total supply and 5.5 volts maximum total supply
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Special Features
input and output ttl compatible; battery backup operation - 2 volt; 600 mil ceramic dual-in-line packaging
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Operating Temp Range
-55.0/+125.0 deg celsius
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Body Width
0.500 inches minimum and 0.610 inches maximum
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Maximum Power Dissipation Rating
1.0 watts
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Capitance Rating Per Characteristic
8.00 input picofarads maximum and 8.00 output picofarads maximum
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Word Quantity (Non-Core)
2000
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Body Height
0.075 inches minimum and 0.130 inches maximum
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Inclosure Configuration
dual-in-line
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Body Length
1.230 inches minimum and 1.290 inches maximum
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Bit Quantity (Non-Core)
16384