SNJ54ABT821W

Technical Characteristics

• Part Name Assigned By Controlling Agency

  microcircuit, digital, advanced bipolar cmos, 10-bit bus interface flip-flop with three-state outputs, ttl compatible inputs, monolithic silicon

• End Item Identification

  joint stars target radar system

• Maximum Power Dissipation Rating

  500.0 milliwatts

• Terminal Surface Treatment

  solder

• Design Function And Quantity

  1 flip-flop

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Terminal Type And Quantity

  24 flat leads

• Inclosure Configuration

  flat pack

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Output Logic Form

  bipolar metal-oxide semiconductor

• Features Provided

  3-state output and monolithic