1DT203L20TDB

Technical Characteristics

• Word Quantity (Non-Core)

  2048

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  28 printed circuit

• Part Name Assigned By Controlling Agency

  cmos asynchronous fifo

• Storage Temp Range

  -65.0/+155.0 deg celsius

• Special Features

  2,048 x 9-bit; thin ceramic dip

• Time Rating Per Chacteristic

  20.00 nanoseconds af output megawatts

• Inclosure Material

  ceramic

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Features Provided

  high speed and low power and asynchronous

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• End Item Identification

  radar threat emitter an/mst-t1; m3p reu-l

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Memory Device Type

  first-in first-out