F1007

Technical Characteristics

• Overall Height

  0.200 inches maximum

• Power Rating Per Characteristic

  100.0 watts small-signal input power, common-collector absolute

• Overall Width

  0.670 inches nominal

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  4.00 amperes source cutoff current maximum of standard range

• Overall Length

  0.975 inches nominal

• Special Features

  8gold metalized; package style - ak; high efficiency; linear; high gain; maximum junction temperature plus 200.0 degrees c; storage temperature minus 65.0 to plus 150.0 degrees c; designed specifically for broadband radio frequency (rf) applications

• Terminal Type And Quantity

  2 tab, solder lug

• Mounting Facility Quantity

  2

• Inclosure Material

  metal

• Features Provided

  low noise

• Mounting Method

  slot

• Part Name Assigned By Controlling Agency

  silicon rf power, vdmos transistor

• Voltage Rating In Volts Per Characteristic

  70.0 maximum drain to source voltage and 70.0 maximum drain to gate voltage and 30.0 maximum gate to source voltage